Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1996-03-07
1997-09-09
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 94, 257190, 257201, H01L 3300, H01L 310328, H01L 310336
Patent
active
056659865
ABSTRACT:
A compound semiconductor light emitting device of high performance and a method which can industrially prepare the same are provided. The compound semiconductor light emitting device includes a GaAs substrate, a buffer layer consisting of GaN, having a thickness of 10 nm to 80 nm, which is formed on the substrate, an epitaxial layer consisting of Al.sub.x Ga.sub.1-x N (0.ltoreq.x<1) which is formed on the buffer layer, an incommensurate plane which is located on the interface between the buffer layer and the epitaxial layer, a light emiting layer which is formed on the epitaxial layer, and a cladding layer which is formed on the light emitting layer. The buffer layer is formed by organic metal chloride vapor phase epitaxy at a first temperature, while the epitaxial layer is formed by organic metal chloride vapor phase epitaxy at a second temperature which is higher than the first temperature. The light emitting layer preferably consists of In.sub.y Ga.sub.1-y N (0<y<1) which is doped with Mg.
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Koukitu Akinori
Matsubara Hideki
Matsushima Masato
Miura Yoshiki
Seki Hisashi
Fasse W. F.
Fasse W. G.
Meier Stephen
Soward Ida M.
Sumitomo Electric Industries Ltd.
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