Epitaxial wafer and method of preparing the same

Details Epitaxial wafer and method of preparing the same Epitaxial wafer and method of preparing the same

1995-12-19

1998-12-01

Speer, Timothy

Stock material or miscellaneous articles

Composite

Of inorganic material

428699, 428700, B32B 1800

Patent

active

058435905

ABSTRACT:
A high performance epitaxial wafer which is useful, for example in a light emitting device is produced with a buffer layer. The epitaxial wafer has a substrate of a compound semiconductor selected from a group consisting of GaAs, GaP, InAs and InP. The buffer layer of GaN is grown on the substrate to a thickness within the range of 10 nm to 80 nm. An epitaxial layer of GaN is formed on the buffer layer. The buffer layer is grown at a first temperature by organic metal chloride vapor phase epitaxy, while the epitaxial layer is grown at a second temperature, which is higher than the first temperature, by the organic metal chloride vapor phase epitaxy.

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Kentaro Onabe "Study on Mechanism of Cubic Structural Transformation Heteroepitaxy of Nitride Compound Semiconductors" Nihon Kessho Seicho Gakkai-Shi, vol. 21 Supplement S409-S414.
Harutoshi Tsuchiya et al, "Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy", Jpn. J. Appl. Phys. vol. 33 (1994) pp. 1747-1752.

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