Epitaxial wafer and method of preparing the same

Details Epitaxial wafer and method of preparing the same Epitaxial wafer and method of preparing the same

1996-08-29

2000-02-29

Bowers, Charles

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 94, 257190, 257201, 427108, 427110, 427123, 438 47, 438479, 438483, 438488, H01L 3300

Patent

active

060312521

ABSTRACT:
An epitaxial wafer enabling epitaxial growth at a high temperature includes a compound semiconductor substrate containing As or P, and a covering layer including GaN; or InN; or AlN; or a nitride mixed-crystalline material containing Al, Ga, In and N. The covering layer covers at least a front surface and a back surface of the substrate. A method of preparing such an epitaxial wafer including steps of growing the covering layer at a growth temperature of at least 300.degree. C. and less than 800.degree. C. so as to cover at least the front and back surfaces of the substrate, and then annealing the substrate having the covering thereon layer at a temperature of at least 700.degree. C. and less than 1200.degree. C.

REFERENCES:
patent: 3675619 (1972-07-01), Burd
patent: 3933538 (1976-01-01), Akai et al.
patent: 4833103 (1989-05-01), Agostinelli et al.
patent: 5665986 (1997-09-01), Miura et al.
"Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100) GaAs and Hexagonal GaN/ (111) GaAs Substrates"; Japan Journal of Applied Phys.; vol. 33 (1994) pp. 6448-6453; Part I, No. 12A, Dec. 1994. (Tsuchiya et al.).
"Study on Mechanism of Cubic Structural Transformation Heteroepitaxy of Nitride Compound Semiconductors"; Japan, Dept. of Applied Physics, Faculty of Engineering; University of Tokyo; vol. 21, No. 5, 1994 (supplem., pp. S409 to S414) (Onabe).

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