Compound semiconductor light emitting device and method of prepa

Details Compound semiconductor light emitting device and method of prepa Compound semiconductor light emitting device and method of prepa

1997-05-15

1998-05-26

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438478, 438925, 117 84, H01L 2100, H01L 2120, H01L 2136, C30B 2300

Patent

active

057563748

ABSTRACT:
A compound semiconductor light emitting device of high performance and a method which can industrially prepare the same are provided. The compound semiconductor light emitting device includes a GaAs substrate, a buffer layer consisting of GaN, having a thickness of 10 nm to 80 nm, which is formed on the substrate, an epitaxial layer consisting of Al.sub.x Ga.sub.1-x N(0.ltoreq.x<1) which is formed on the buffer layer, an incommensurate plane which is located on the interface between the buffer layer and the epitaxial layer, a light emitting layer which is formed on the epitaxial layer, and a cladding layer which is formed on the light emitting layer. The buffer layer is formed by organic metal chloride vapor phase epitaxy at a first temperature, while the epitaxial layer is formed by organic metal chloride vapor phase epitaxy at a second temperature which is higher than the first temperature. The light emitting layer preferably consists of In.sub.y Ga.sub.1-y N (0<y<1) which is doped with Mg.

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