4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Including semiconductor material other than silicon or...
  6. Group iii-v compound

Masato Kobayakawa

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Gallium nitride-based compound semiconductor multilayer...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate

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Gallium nitride-based semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate

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Gallium nitride-based semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate

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N-type group III nitride semiconductor layered structure

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate

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Nitride semiconductor; light-emitting device, light-emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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Profile ID: LFUS-PAI-P-3155480

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