Nitride semiconductor; light-emitting device, light-emitting...

Details Nitride semiconductor; light-emitting device, light-emitting... Nitride semiconductor; light-emitting device, light-emitting...

2004-10-01

2009-02-10

Valentine, Jami M (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000

Reexamination Certificate

active

07488971

ABSTRACT:
A nitride semiconductor product including an n-type layer, a light-emitting layer, and a p-type layer which are formed of a nitride semiconductor and sequentially stacked on a substrate in the above order, the light-emitting layer having a quantum well structure in which a well layer is sandwiched by barrier layers having band gaps wider than the band gap of the well layer. Each barrier layer includes a barrier sublayer C which has been grown at a temperature higher than a growth temperature of the well layer, and a barrier sublayer E which has been grown at a temperature lower than a growth temperature of the barrier sublayer C. The barrier sublayer C is disposed closer to the substrate with respect to the barrier sublayer E.

REFERENCES:
patent: 5926726 (1999-07-01), Bour et al.
patent: 2002/0070681 (2002-06-01), Shimizu et al.
patent: 2001-102629 (2001-04-01), None
patent: 2002-43618 (2002-02-01), None
patent: 2002043618 (2002-02-01), None
patent: 2002-133925 (2002-05-01), None
patent: 2002-043618 (2002-08-01), None
patent: 2003-229645 (2003-08-01), None

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