N-type group III nitride semiconductor layered structure

Details N-type group III nitride semiconductor layered structure N-type group III nitride semiconductor layered structure

2005-04-27

2010-12-21

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S013000, C257SE33008, C438S046000

Reexamination Certificate

active

07855386

ABSTRACT:
An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits.The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.

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