Masashige Aoyama

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Insulated gate field effect transistor with buried layer

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Method for production of semiconductor integrated circuit device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Semiconductor device and method of manufacturing thereof

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate

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Profile ID: LFUS-PAI-P-125722

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