Insulated gate field effect transistor with buried layer

Details Insulated gate field effect transistor with buried layer Insulated gate field effect transistor with buried layer

1988-10-27

1990-03-13

James, Andrew J.

357 13, 357 91, 357 20, H01L 2978, H01L 2990

Patent

active

049086812

ABSTRACT:
An insulated gate field effect transistor fabricated in one conductivity type semiconductor substrate wherein a source region and a drain region are formed apart each other to define a channel region therebetween, having a deep ion implantation region which is so formed in the lower portion of the channel region that at least one end portion of the depletion region of the channel extends towards the source region beyond the border between the source region and the channel region at the surface of the substrate whereby an imaginary straight line drawn from said border at the surface of the substrate and an intersecting point between the depletion region of the source and the depletion region of the channel region without a back gate bias voltage defines an angle larger than 90.degree. against the surface of the substrate.

REFERENCES:
patent: 3653978 (1972-04-01), Robinson et al.
patent: 3745425 (1973-07-01), Beale et al.
patent: 3789504 (1974-02-01), Jaddam
patent: 3860454 (1975-01-01), De Witt et al.
patent: 3891468 (1975-06-01), Ito et al.
patent: 4078947 (1978-03-01), Johnson et al.
patent: 4132998 (1979-01-01), Dingwall
patent: 4148046 (1979-04-01), Hendrickson et al.
patent: 4242691 (1980-12-01), Kotani et al.
patent: 4276555 (1981-06-01), Vinal
patent: 4315781 (1982-02-01), Henderson
patent: 4334235 (1982-06-01), Nishizawa
Konaka et al, "Suppression of Anomalous . . . MOSFET", Proceedings of the 10th Conf. on Solid State Devices, Tokyo, 1978, Jap. Jour. of App. Phys., vol. 18 (1979), Suppl. 18-1, pp. 27-33.

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