Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-07-31
1999-08-17
Booth, Richard A.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438287, 438305, 257500, H01L 218234, H01L 21336
Patent
active
059407085
ABSTRACT:
A method for the production of a semiconductor integrated circuit device is disclosed, wherein the formation of lateral wall spacers for high voltage MOS transistor is implemented by forming a resist film for covering at least an insulating film formed on a drain region of low impurity concentration in the proximity of a gate electrode, masking the resist film, and etching the parts of the insulating film destined to give rise to the lateral wall spacers.
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Aoyama Masashige
Yoshitake Kazuhiro
Booth Richard A.
Sanyo Electric Co,. Ltd.
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