Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
2011-07-12
2011-07-12
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
C438S530000, C438S795000, C257SE21103, C257SE21120
Reexamination Certificate
active
07977221
ABSTRACT:
A strained Si—SOI substrate, and a method for producing the same are provided, wherein the method includes the steps of growing a SiGe mixed crystal layer14on an SOI substrate10having an Si layer13and a buried oxide film12; forming protective films15, 16on the surface of the SiGe mixed crystal layer14; implanting light element ions into a vicinity of the interface between the Si layer13and the buried oxide film12; performing a first heat treatment at a temperature in the range of 400 to 1000° C.; performing a second heat treatment at a temperature not lower than 1050° C. under an oxidizing atmosphere; performing a third heat treatment at a temperature not lower than 1050° C. under an inert atmosphere; removing the Si oxide film18formed on the surface; and forming a strained Si layer19.
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Office action issued Oct. 19, 2010 in connection with related Japanese Application No. 2005-090083.
Matsumoto Koji
Miyao Masanobu
Nakamae Masahiko
Ninomiya Masaharu
Kolisch & Hartwell, P.C.
Kyushu University, National University Corporation
Landau Matthew C
Nicely Joseph C
Sumco Corporation
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