4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Processes of growth from liquid or supercritical state
  6. Havin growth from molten state

Leszek P. Sierzputowski

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Bulk nitride mono-crystal including substrate for epitaxy

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate

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Bulk nitride mono-crystal including substrate for epitaxy

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate

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Bulk nitride mono-crystal including substrate for epitaxy

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate

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Nitride semiconductor laser device and a method for...

Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate

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Process for obtaining of bulk monocrystalline...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2412916

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