Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2008-04-29
2008-04-29
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S083000
Reexamination Certificate
active
07364619
ABSTRACT:
The invention relates to new improvements in a process for crystal growth in the environment of supercritical ammonia-containing solution, which are based on use of specific azide mineralizers and result in the improved bulk Group XIII element nitride monocrystals, in particular balk monocrystalline gallium-containing nitride, intended mainly for variety of nitride-based semiconductor products such as various opto-electronic devices. The invention further relates to a mineralizer used for supercritical ammonia-containing solution which comprises at least one compound selected from the group consisting of LiN3, NaN3, KN3, and CsN3.
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Doradzinski Roman
Dwilinski Robert
Garczynski Jerzy
Kanbara Yasuo
Sierzputowski Leszek P.
Ammono. Sp. zo.o.
Hiteshew Felisa
Morrison & Foerster / LLP
Nichia Corporation
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