Nitride semiconductor laser device and a method for...

Details Nitride semiconductor laser device and a method for... Nitride semiconductor laser device and a method for...

2003-06-26

2008-01-01

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

07315559

ABSTRACT:
The present invention relates to a nitride semiconductor laser device provided with a window layer on a light-emitting end face of the resonator which comprises an active layer of nitride semiconductor between the n-type nitride semiconductor layers and the p-type nitride semiconductor layers, in which at least the radiation-emitting end face of said resonator is covered by said window layer comprising monocrystalline nitride of general formula AlxGa1−x−yINyN, where 0≦x+y≦1, 0≦x≦1 and 0≦y<1, having a wider energy gap than that of the active layer and being formed at a low temperature so as not to damage said active layer. Formation of such a window layer improves significantly the performance of the nitride laser device according to the invention.

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Douglas R. Ketchum et al., “Crystal Growth of Gallium Nitride in Supercritical Ammonia”, Journal of Crystal Growth, Jan. 2001, pp. 431-434, vol. 222, Elsevier Science B.V.

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