High-K dielectric metal gate device structure

Details High-K dielectric metal gate device structure High-K dielectric metal gate device structure

2009-10-23

2010-11-09

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257S407000, C257SE27064

Reexamination Certificate

active

07829949

ABSTRACT:
A metal gate/high-k dielectric semiconductor device provides an NMOS gate structure and a PMOS gate structure formed on a semiconductor substrate. The NMOS gate structure includes a high-k gate dielectric treated with a dopant impurity such as La and the high-k gate dielectric material of the PMOS gate structure is deficient of this dopant impurity and further includes a work function tuning layer over the high-k gate dielectric.

REFERENCES:
patent: 5763922 (1998-06-01), Chau
patent: 6893924 (2005-05-01), Visokay
patent: 7229893 (2007-06-01), Wang et al.
patent: 2005/0258468 (2005-11-01), Colombo et al.
patent: 2006/0030096 (2006-02-01), Weimer
patent: 2006/0226470 (2006-10-01), Cho et al.
patent: 2007/0178634 (2007-08-01), Jung et al.
patent: 2007/0272975 (2007-11-01), Schaeffer et al.
patent: 2008/0237604 (2008-10-01), Alshareef et al.
patent: 2008/0261368 (2008-10-01), Ramin et al.
patent: 2008/0274598 (2008-11-01), Ramin et al.
patent: 2008/0277726 (2008-11-01), Doris et al.

Affiliated with

Also associated with

Rating

High-K dielectric metal gate device structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-K dielectric metal gate device structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-K dielectric metal gate device structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4155817