4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Incoherent light emitter structure
  6. With heterojunction

Kazuyuki Tadatomo

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active

GAN group crystal base member having low dislocation...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate

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GaN group semiconductor light-emitting element with concave...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate

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Gan single crystal

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or...
Patent

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GaN single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

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Group-III nitride based light emitter

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent

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Profile ID: LFUS-PAI-P-614604

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