Group-III nitride based light emitter

Details Group-III nitride based light emitter Group-III nitride based light emitter

1996-08-28

1998-08-11

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257103, 257 94, H01L 3300

Patent

active

057930619

ABSTRACT:
A group-III nitride based light emitter such as LED and LD, which has a double heterostructure and which comprises a diffusion suppressive layer between a p-type cladding layer and an active layer. The diode having a diffusion suppressive layer of the present invention has higher luminous intensity, greater forward voltage, and longer lifetime than the conventional diodes.

REFERENCES:
patent: 5345463 (1994-09-01), Mannoh et al.

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