4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Incoherent light emitter structure
  6. With heterojunction

Jun-ya Ishizaki

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Compound semiconductor single crystal and fabrication...

Compositions – Electrically conductive or emissive compositions – Light sensitive
Reexamination Certificate

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Light emitting device and method for fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate

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Light emitting device and method of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate

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Light emitting device and method of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate

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Light-emitting device and method of fabricating the same

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2334489

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