Light emitting device and method of fabricating the same

Details Light emitting device and method of fabricating the same Light emitting device and method of fabricating the same

2011-06-14

2011-06-14

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257SE33023, C257SE33005, C438S046000

Reexamination Certificate

active

07960745

ABSTRACT:
A light emitting device comprises a light emitting layer section having a double heterostructure of an n-type cladding layer, an active layer and a p-type cladding layer, each composed of AlGaInP stacked in this order. Supposing a bonding object layer having a first main surface side as p type and a second main surface side as n type, a light extraction side electrode is formed to cover the first main surface partially. An n-type transparent device substrate composed of Group III-V compound semiconductor having greater band gap energy than the active layer is bonded to the second main surface of the bonding object layer. On one sides of the transparent device substrate and the bonding object layer, a bonding surface to the other is formed, and an InGaP intermediate layer is formed to have a high concentration Si doping layer formed on the bonding surface side.

REFERENCES:
patent: 6586773 (2003-07-01), Saeki et al.
patent: 2009/0152584 (2009-06-01), Grillot et al.
patent: 2000-200924 (2000-07-01), None
patent: 2002-203987 (2002-07-01), None
patent: 2005-38995 (2005-02-01), None
patent: 2005-259912 (2005-09-01), None
patent: 2005-317664 (2005-11-01), None

Affiliated with

Also associated with

Rating

Light emitting device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2732247