Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-04-24
2007-04-24
Le, Thao X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S043000, C257SE33001
Reexamination Certificate
active
10550298
ABSTRACT:
A light emitting device1has formed therein a light emitting layer section24based on a double heterostructure in which a p-type cladding layer34, an active layer33and an n-type cladding layer32, individually composed of a MgaZn1-aO (0≦a≦1) type oxide, are stacked in this order, and uses a face on the n-type cladding layer side as a light extraction surface. The device also has, as being provided on the main surface on the light extraction surface side of the n-type cladding layer32, an n-type low resistivity layer35composed of a MgaZn1-aO type oxide, and having a content of an n-type dopant larger than that in the n-type cladding layer32. There is thus provided a light emitting device of MgaZn1-aO-type oxide base, excellent in the light extraction efficiency, having the light emitting layer section composed of a MgaZn1-aO-type oxide, and a high conductivity MgZnO-base compound semiconductor layer disposed on the light extraction surface side.
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Hafiz Mursalin B.
Le Thao X.
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
Snider & Associates
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