Light emitting device and method for fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

Reexamination Certificate

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Details

C257S081000, C257S096000, C257S432000

Reexamination Certificate

active

06982438

ABSTRACT:
In a MgZnO layer composing an active layer or a p-type cladding layer32, a p-type oxide layer32bwhich is different from MgaZn1-aO-type oxide and has a p-type conductivity is disposed. Because a function of absorbing and compensating electrons in this configuration is owned by the p-type oxide layer localized in the MgZnO layer, it is no more necessary to add a large amount of dopant, and this is successful in obtaining a p-type or i-type MgaZn1-aO-type oxide having a desirable quality, and in realizing a high-emission-efficiency, light-emitting device capable of emitting ultraviolet or blue light. Adoption of a junction structure, in which at least either of the p-type cladding layer and the n-type cladding layer comprises a first crystal layer, and a second crystal layer which is hetero-bonded to the first crystal layer, and on the side thereof opposite to the active layer and has a band gap energy smaller than that of the first crystal layer, is successful in effectively injecting the carrier to the active layer, and consequently in raising the emission efficiency.

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