Jerzy Garczynski

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Bulk nitride mono-crystal including substrate for epitaxy

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate

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Bulk nitride mono-crystal including substrate for epitaxy

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate

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Method and equipment for manufacturing aluminum nitride bulk...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate

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Method and equipment for manufacturing aluminum nitride bulk...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate

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Method of forming gallium-containing nitride bulk single...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2237133

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