Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate
2008-05-20
2008-05-20
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
C117S069000, C117S070000, C117S073000
Reexamination Certificate
active
07374615
ABSTRACT:
The present invention provides a process for forming a bulk monocrystalline aluminum nitride by using a supercritical ammonia. The process comprises the steps of forming a supercritical solvent containing ions of an alkali metal in an autoclave; and dissolving a feedstock in this supercritical solvent to form a supercritical solution, and simultaneously or separately crystallizing aluminum nitride on the face of a crystallization seed. This process is carried out in the autoclave (1) which is provided with a convection-controller (2) arranged therein and which is to produce a supercritical solvent. The autoclave is set in a furnace unit (4) equipped with a heater (5) and/or a cooler (6).
REFERENCES:
patent: 5096860 (1992-03-01), Nadkarni
patent: 5456204 (1995-10-01), Dimitrov et al.
patent: 5589153 (1996-12-01), Garces et al.
patent: 5780876 (1998-07-01), Hata
patent: 5868837 (1999-02-01), DiSalvo et al.
patent: 5928421 (1999-07-01), Yuri et al.
patent: 6051145 (2000-04-01), Griffith et al.
patent: 6067310 (2000-05-01), Hashimoto et al.
patent: 6139628 (2000-10-01), Yuri et al.
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6177057 (2001-01-01), Purdy
patent: 6270569 (2001-08-01), Shibata et al.
patent: 6372041 (2002-04-01), Cho et al.
patent: 7081162 (2006-07-01), Dwilinski et al.
patent: 7160388 (2007-01-01), Dwili ski et al.
patent: 2001/0008656 (2001-07-01), Tischler et al.
patent: 2001/0022154 (2001-09-01), Cho et al.
patent: 2002/0189531 (2002-12-01), Dwilinski et al.
patent: 2004/0139912 (2004-07-01), Dwilinski
patent: 2004/0244680 (2004-12-01), Dwilinski et al.
patent: 2004/0255840 (2004-12-01), Dwilinski et al.
patent: 2006/0032428 (2006-02-01), Dwilinski et al.
patent: 2006/0037530 (2006-02-01), Dwilinski et al.
patent: 1036414 (1989-10-01), None
patent: 1289867 (2001-04-01), None
patent: 1065289 (2001-05-01), None
patent: 0 711 853 (1996-05-01), None
patent: 0 716 457 (1996-06-01), None
patent: 0711853 (1999-09-01), None
patent: 1 088 914 (2001-04-01), None
patent: 2 796 657 (2001-01-01), None
patent: 2 326 160 (1998-12-01), None
patent: 2 333 521 (1999-07-01), None
patent: 07-022692 (1995-03-01), None
patent: 7-165498 (1995-06-01), None
patent: 8-250802 (1996-09-01), None
patent: 9-134878 (1997-05-01), None
patent: 09-293897 (1997-11-01), None
patent: 10-7496 (1998-01-01), None
patent: 10-70079 (1998-03-01), None
patent: 10-70338 (1998-03-01), None
patent: 410070079 (1998-03-01), None
patent: 11-54847 (1999-02-01), None
patent: 11-307813 (1999-11-01), None
patent: 2000-82863 (2000-03-01), None
patent: 2000-216494 (2000-08-01), None
patent: 2000-327495 (2000-11-01), None
patent: 2001-342100 (2001-12-01), None
patent: 2003040699 (2003-02-01), None
patent: 2004168656 (2004-06-01), None
patent: WO98/55671 (1998-12-01), None
patent: WO 01/24284 (2001-04-01), None
patent: WO 01/024921 (2001-04-01), None
patent: WO-02101120 (2002-12-01), None
Melnik et al. “Properties of Free-Standing GaN Bulk Cyrstals Grown by HPVE”, Mat. Res. Soc. Symp. Proc. vol. 482 (1998) pp. 269-274.
Balkas et al. “Growth of Bulk AiN and GaN Single Crystals by Sublimation”, Mat. Res. Soc. Symp. Proc. vol. 449 (1997) pp. 41-46.
Porowski et al. “Bulk and Homeoepitaxial GaN-Growth and Characterisation”, Journal of Crystal Growth, 189/190 (1998) pp. 153-158.
Preliminary Notice of Rejection of the IPO(Translation), 3 pages.
Journal of Physics Condensed Matter, v13, n32, Aug. 13, 2001, pp. 6875-6892.
Physica Status Solidi (a) Applied Research, v180, n1, 2000, pp. 51-58.
PCT Form PCT/IB/338, Jul. 1996.
PCT Form PCT/IPEA/409, Jul. 1998.
Mao et al., “New Concept Technology Pressure Variation Liquid Phase Epitaxy”, SPIE Photonics Taiwan Conference Proceeding, Jul. 2000, pp. 1-12.
Shin-ichi Hirano et al. (1989) “Hydrothermal Synthesis of Gallium Orthophosphate Crystals,” Bull. Chem. Soc. Jpn. 62, pp. 275-278.
(1997). “Single Crystal Growth,” Chapter 1 In Hydrothermal Synthesis Handbook. Gihodo Press, Second Edition, pp. 245-255.
R. A. Laudise (1991). “What is Materials Chemistry?”. Chapter 27 In Materials for NonLinear Optics: Chemical Perspectives. American Chemical Society. pp. 410-433.
Noboru Sakagami et al. (1974) “Growth Kinetics and Morphology of ZnO Single Crystal Grown under Hydrothermal Conditions,”Journal of the Ceramic Association82, pp. 405-413.
T. Sekiguchi et al. (2000) “Hydrothermal Growth of ZnO Single Crystals and their Optical Characterization,”Journal of Crystal Growth214/215, pp. 72-76.
K. Yanagisawa et al. (1996) “Hydrothermal Single Growth of Calcite in Ammonium Acetate Solution,”Journal of Crystal Growth163, pp. 285-294.
K. Yanagisawa et al. (2001) “Improvement of Quality of Hydrothermally Grown Calcite Single Crystals,”Journal of Crystal Growth229, pp. 440-444.
S. Hirano (1991) “Growth of Gallium Orhophosphate Single Crystals in Acidic Hydrothermal Solutions,”Journal of Materials Science24, pp. 2805-2808.
Notification from Japanese Patent Office dated Mar. 29, 2005 and Submission of Printed Publication.
Chinese Office Action dated Apr. 8, 2005.
Akasaki, I. et al. (1991). “Growth and Properties of Single Crystalline GaN Films by Hydride Vapor Phase Epitaxy,”Crystal Properties and Preparation32-34:154-157.
Chu, T. L. et al. (1974). “Crystal Growth and Characterization of Gallium Nitride,”J. Electrochem. Soc.: Solid-State Science and Technology121-1:159-162.
Kaschner, A. et al. (1999). “Influence of Doping on the Lattice Dynamics of Gallium Nitride,”MRS Internet J. Nitride Semicond. Res. 4S1, G3.57.
Kim, S. T. et al. (1998). “Preparation and Properties of Free-standing HVPE Grown GaN Substrates,”Journal of Crystal Growth194:37-42.
Kuroda, Naotaka et al. (1998). “Precise Control of Pn-junction Profiles for GaN-based LD structures Using GaN Substrates with Low Dislocation Densities,”Journal of Crystal Growth189/190:551-555.
Motoki, Kensaku et al. (2001). “Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate,”J. Appl. Phys.40:L140-L143.
Office Action mailed Apr. 20, 2005, directed to U.S. Appl. No. 10/479,807.
D. Peters (1990) “Ammonothermal Synthesis of Aluminum Nitride,” Journal of Crystal Growth 104, pp. 411-418.
M. K. Kelly et al. (1996) “Optical Patterning of GaN Films,”Apply. Phys. Lett. 69(12), pp. 1749-1751.
W. S. Wong et al. (1999) “Fabrication of Thin-Film InGaN Light-Emitting Diode Membranes by Laser Lift-Off,”Applied Physics Letters75(10), pp. 1360-1362.
D. Ketchum, et al., “Crystal growth of gallium nitride in supercritical ammonia”,Journal of Crystal Growth, vol. 222, Jul. 18, 2000.
R. Dwilinski, et al., “AMMONO method of GaN and AlN production”,Diamond and Related Materials, vol. 7, May 18, 1998.
Yamane, Hisanori et al. (1998) “Morphology and Characterization of GaN Single Crystals Grown in a Na Flux,” Journal of Crystal Growth 186, pp. 8-12.
Yamane, Hisanori et al. (1998) “Na Flux Growth of GaN Single Crystals,” Journal of the Japanese Association for Crystal Growth 25(4), pp. 14-18, with partial English translation.
Notification from Japanese Patent Office mailed Mar. 14, 2006, directed to JP Application No. 2003-503867, with partial English translation.
R. Dwilinski et al., AMMONO method of GaN and AIN production, May 18, 1998, pp. 1348-1350.
Hisanori Yamane, Polarity of GaN Single Crystals Prepared with Na Flux, pp. 3436-3440.
Masichi Yano et al., Control of Nucleation Site and Growth Orientation of Bulk GaN Crystals.
R. Dwilinski et al., AMMO method of BN, AIN and GaN synthesis and crystal growth, pp. 1-4.
K. Pakula et al., Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals, vol. 88 (1995), pp. 861-864.
R. Dwilinski et al. On GaN Crystallization by Ammonothermal Method, vol. 90(1996, pp. 763-766.
R. Dwilinski et al., Exciton plhoto
Doradzinski Roman
Dwilinski Robert
Garczynski Jerzy
Kanbara Yasuo
Sierzputowski Leszek
Ammono.SP.ZO.O
Kunemund Robert
Morrison & Foerster / LLP
Nichia Corporation
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