4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Combined with electrical contact or lead
  6. Of specified material other than unalloyed aluminum

James E. Harris

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Aluminum metallization for sige devices

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...
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Aluminum metallization for SiGe devices

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
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Barium strontium titanate (BST) thin films by erbium donor dopin

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Barium strontium titanate (BST) thin films using boron

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
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Chemical vapor deposition of metal oxide films through ester eli

Coating processes – Heat decomposition of applied coating or base material
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Profile ID: LFUS-PAI-P-132795

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