Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-09-30
1997-06-03
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257532, 3613215, H01L 27108
Patent
active
056357419
ABSTRACT:
A semiconductor device and process for making the same are disclosed which incorporate a relatively large percentage of erbium dopant (1 to 5%) into a BST dielectric film 24 with small grain size (e.g. 10 nm to 50 nm). Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Apparently, properties of the thin film deposition and small grain size, including temperatures well below bulk BST sintering temperatures, allow the film to support markedly higher defect concentrations without erbium precipitation than are observed for bulk BST. For erbium doping levels generally between 1% and 3%, over an order of magnitude decrease in leakage current (compared to undoped BST) may be achieved for such films.
REFERENCES:
patent: 4863883 (1989-09-01), Menashi et al.
patent: 5314651 (1994-05-01), Kulwicki
patent: 5453908 (1995-09-01), Tsu et al.
I. K. Yoo, S. B. Sesu, and J. Xing, Mat. Res. Soc. Symp. Proc. vol. 310 (1993).
L. A. Xue, Y. Chen, and R. J. Brook, Materials Science and Engineeering, B1, 193-201, (1988).
Rainer Waser, J. A. Am. Ceram. Soc. 74(8), 1934-40 (1991).
Kulwicki Bernard M.
Tsu Robert
Donaldson Richard L.
Harris James E.
Prenty Mark V.
Stoltz Richard A.
Texas Instruments Incorporated
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