Aluminum metallization for SiGe devices

Details Aluminum metallization for SiGe devices Aluminum metallization for SiGe devices

1995-06-07

1998-07-21

Kunemund, Robert

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

148334, 148 33, 438291, 117928, 117939, 437131, C30B 2306

Patent

active

057829977

ABSTRACT:
Single crystal aluminum is deposited on SiGe structures to form metal interconnects. Generally, a method of forming single crystal aluminum on Si.sub.(1-X) Ge.sub.X is presented, including the steps of maintaining the substrate at certain temperature (e.g. between 300.degree. C. and 400.degree. C.) and pressure conditions (e.g. below 2.times.10.sup.-9 millibar) while aluminum atoms are deposited by a vacuum evaporation technique. This is apparently the first method of depositing single crystal aluminum on SiGe surfaces. Novel structures are made possible by the invention, including epitaxial layers 34 formed on single crystal aluminum 32 which has been deposited on SiGe 30. Among the advantages made possible by the methods presented are thermal stability and resistance to electromigration.

REFERENCES:
patent: 3929527 (1975-12-01), Chang et al.
patent: 4325776 (1982-04-01), Menzel
patent: 4554030 (1985-11-01), Haisma et al.
patent: 5216271 (1993-06-01), Takagi et al.
patent: 5262361 (1993-11-01), Cho et al.

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