Barium strontium titanate (BST) thin films using boron

Details Barium strontium titanate (BST) thin films using boron Barium strontium titanate (BST) thin films using boron

1995-06-07

1997-04-01

Ledynh, Bot L.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361313, 361320, 3613215, H01G 406

Patent

active

056172907

ABSTRACT:
A semiconductor device and process for making the same are disclosed which incorporate boron, which has been found to be substantially insoluble in BST, into a BST dielectric film 24. Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Boron included in a BST precursor may be used to form boron oxide in a second phase 30, which is distributed in boundary regions between BST crystals 28 in film 24. It is believed that the inclusion of boron allows for BST grains of a desired size to be formed at lower temperature, and also reduces the leakage current of the capacitive structure.

REFERENCES:
patent: 4988650 (1991-01-01), Takagi et al.

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