4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Specified wide band gap semiconductor material other than...
  6. Diamond or silicon carbide

Hua-Shuang Kong

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Apparatus for eliminating residual nitrogen contamination in epi

Metal working – Barrier layer or semiconductor device making
Patent

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Blue light-emitting diode with degenerate junction structure

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Patent

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Blue light-emitting diode with high external quantum efficiency

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Patent

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Double heterojunction light emitting diode with gallium nitride

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent

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Double heterojunction light emitting diode with gallium nitride

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

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Profile ID: LFUS-PAI-P-607942

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