Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1995-05-08
1998-04-14
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 94, H01L 3300
Patent
active
057395543
ABSTRACT:
A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.
REFERENCES:
patent: 3740622 (1973-06-01), Pankove et al.
patent: 3819974 (1974-06-01), Stevenson et al.
patent: 3849707 (1974-11-01), Braslau et al.
patent: 3864592 (1975-02-01), Pankove
patent: 3984263 (1976-10-01), Asao et al.
patent: 4153905 (1979-05-01), Charmakadze et al.
patent: 4396929 (1983-08-01), Ohki et al.
patent: 4408217 (1983-10-01), Kobayashi et al.
patent: 4473938 (1984-10-01), Kobayashi et al.
patent: 4476620 (1984-10-01), Ohki et al.
patent: 4855249 (1989-08-01), Akasaki et al.
patent: 4862471 (1989-08-01), Pankove
patent: 4903088 (1990-02-01), Van Opdorp
patent: 4911102 (1990-03-01), Manabe et al.
patent: 4985742 (1991-01-01), Pankove
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5218216 (1993-06-01), Manabe et al.
patent: 5239188 (1993-08-01), Takeuchi et al.
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5272108 (1993-12-01), Kozawa
patent: 5273933 (1993-12-01), Hatano et al.
patent: 5278433 (1994-01-01), Manabe et al.
patent: 5281830 (1994-01-01), Kotaki et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5369289 (1994-11-01), Tamaki et al.
patent: 5387804 (1995-02-01), Suzuki et al.
patent: 5389571 (1995-02-01), Takeuchi et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5578839 (1996-11-01), Nakamura et al.
International Search Report for PCT/US96/5160 filed Apr. 15, 1996, dated Aug. 30, 1996 by A. De Laere.
GaN Electroluminescent Diodes, J. I. Pankove et al., RCA Review, vol. 32, Sep. 1971, pp. 382-393.
Gallium Nitride Films, T. L. Chu, J. Electrochem, vol. 118, No. 7, (1971), pp. 1200-1203.
GaN Blue Light-Emitting Diodes, J. I. Pankove, Journal of Luminescence, vol. 5, (1972), pp. 84-86.
Preparation of Mg-Doped GaN Diodes Exhibiting Violet Electroluminescence, H. P. Maruska, Mat. Res. Bull. vol. 7, No. 8, pp. 777-781.
Violet Luminescence of Mg-doped GaN, H. P. Maruska et al., Appl. Phys. Lett., vol. 22, No. 6, Mar. 1973, pp. 303-305.
Electrical Properties of n-Type Vapor-Grown Gallium Nitride, M. Ilegems et al.; J. Phys. Chem. Solids, vol. 34, 1973, pp. 885-895.
GaN Yellow-Light Emitting Diodes, J. I. Pankove, Journal of Luminescence, vol. 6, (1973), pp. 54-60.
Violet-Electroluminescence from Mg-doped GaN Point Contact Diodes, Y. Morimoto, Japan J. Appl. Phys., vol. 13 (1974), No. 8, pp. 1307-1308.
Anomalous I-V Characteristics in Mg-Doped GaN Point Contact Diodes, Y. Morimoto, Japan, J. Appl. Phys. vol. 14, (1975), No. 4, pp. 577-578.
Gallium Nitride Diodes Emitting Dark Blue to Violet Light, A. N. Vasilishchev et al., Sov. Phys. Semicond., vol. 9, No. 9 (1975), pp. 1189-1190.
Low-Voltage GaN LED's, V. M. Andreev, Sov. Tech. Phys. Lett., vol. 3, No. 2, Feb. 1977, pp. 75-76.
Efficient Injection Mechanism for Electroluminescence in GaN, G. Jacob et al., Applied Physics Letters, vol. 30, No. 18, Apr. 1977, pp. 412-414.
Improvements on the Electrical and Luminescent Properties of Reactive Molecular Beam Epitaxially Grown GaN Films by Using AlN-Coated Sapphire Substrates, S. Yoshida et al., Appl. Phys. Lett. 42(5), Mar. 1983, pp. 427-429.
Properties of GaN Tunneling MIS Light-Emitting Diodes, O. Lagerstedt et al., J. Appl. Phys. 49(5), May 1978, pp. 2953-2957.
P-Type Conduction in Mg-Doped GaN Treated With Low-Energy Electron Beam Irradiation (LEEBI), H. Amano et al., JJAP, vol. 28, No. 12, Dec. 1989, pp. L2112-L2114.
Molecular Beam Epitaxy of Nitride Thin Films, M. J. Paisley, Journal of Crystal Growth 127 (1993) pp. 136-142.
High Efficiency UV and Blue Emitting Devices Prepared by MOVPE and Low Energy Electron Beam Irradiation Treatment, I. Akasaki et al., SPIE, vol. 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications (1990), pp. 138-149.
UV and Blue Electroluminescence from Al/GaN:Mg/GaN LED Treated With Low-Energy Electron Beam Irradiation (LEEBI), H. Amano, Inst. Phys. Conf. Ser. No. 106, Chapter 10, pp. 725-730.
High-Power InGaN/GaN Double-Heterostructure Violet Light Emitting Diodes, S. Nakamura, Appl. Phys. Lett., vol. 62, No. 19, May 1993, pp. 2390-2392.
P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes, S. Nakamura, Jpn., J. Appl. Phys. vol. 32 (1993), pp. L8-L11.
Candela-Class High-Brightness InGaN/AlGaN Double-Heterostructure Blue-Light-Emitting Diodes, S. Nakamura, Appl. Phys. Lett. vol., 64, No. 13, Mar. 1994, pp. 1687-1689.
Perspective of the UV/Blue Light Emitting Devices Based on GaN and Related Compounds, I. Akasaki et al., Optoelectronics Devices and Technologies, vol. 7, No. 1, Jun. 1992, pp. 49-56.
Optical Gain of Optically Pumped A1.sub.0.1 Ga.sub.0.9 N/GaN Double Heterostructure at Room Temperature, S. T. Kim et al., Appl. Phys. Lett., vol. 64, No. 12, Mar. 1994, pp. 1535-1536.
Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al.sub.0.1 Ga.sub.0.9 N/GaN Double Heterostructure, H. Amano et al., Jpn. J. Appl. Phys. vol. 32 (1993), pp. L-1000-L1002.
Electrical and Structural Properties of In.sub.x Ga.sub.1-x N on GaAs, C. R. Abernathy, Appl. Phys. Lett. No. 66, No. 13, Mar. 1995, pp. 1632-1634.
p-Type Conduction in Mg-doped Ga.sub.0.91 In.sub.0.09 N Grown by Metalorganic Vapor-Phase Epitaxy, S. Yamasaki et al., APL, vol. 66, No. 9, 1995, pp. .sub.--.
High-Brightness InGaN/AlGaN Double-Heterostructure Blue-Green-Light-Emitting Diodes, S. Nakamura et al., J. Appl. Phys., vol. 76, No. 12, Dec. 1994, pp. 8189-8191.
Development of Blue High-Intensity LED, 956C3806 Tokyo Nikkei Science in Japanese, Oct. 1994, pp. 44-45.
Growth of In.sub.x Ga.sub.(1-x) N Compound Semiconductors and High-Power InGaN/AlGaN double Heterostructure Violet-Light-Emitting Diodes, S. Nakamura, Microelectronics Journal, vol. 25, 1994, pp. 651-659.
Widegap Column-III Nitride Semiconductors for UV/Blue Light Emitting Devices, I. Akasaki et al., J. Electrochem. Soc., vol. 141, No. 8, Aug. 1994, pp. 2266-2271.
Preparation of Al.sub.x Ga.sub.1-x N/GaN Heterostructure by Movpe, K. Ito et al., Journal of Crystal Growth, vol. 104, 1990, pp. 533-538.
Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al.sub.0.1 Ga.sub.0.9 N Layered Structures, K. Itoh et al., Japanese Journal of Applied Physics, vol. 30, No. 9A, Sep. 1991, pp. 1924-1927.
Conductivity Control of AlGaN.sub.1 Fabrication of AlGaN/GaN Multi-Heterostructure and Their Application to UV/Blue Light Emitting Devices, I. Akasaki et al., Mat. Res. Soc. Symp. Proc., vol. 242, Materials Research Society, 1992, pp. 383-395.
Room Temperature Ultraviolet/Blue Light Emitting Devices Based on AlGaN/GaN Multi-Layered Structure, I. Akasaki et al., Extended Abstracts of the 1992 International Conf. on Solid State Devices and Materials, Tsukuba, 1992, pp. 327-239.
Conductivity Control of GaN and Fabrication of UV/Blue GaN Light Emitting Devices, I. Akasaki et al., Physica B, vol. 185, 1993, pp. 428-432.
Edmond John A.
Kong Hua-Shuang
Cree Research Inc.
Meier Stephen
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