Metal working – Barrier layer or semiconductor device making
Patent
1990-07-24
1992-06-09
Chaudhuri, Olik
Metal working
Barrier layer or semiconductor device making
118720, 156612, 437100, C30B 2512
Patent
active
051195402
ABSTRACT:
The invention is a method, and associated apparatus and product, of forming extremely pure epitaxial layers of silicon carbide by reducing the carrier concentration of residual nitrogen in silicon carbide formed by chemical vapor deposition processes. The method comprises placing a substrate upon which an epitaxial layer of silicon carbide will form upon a susceptor, and in which the susceptor is formed of a material that will not generate undesired nitrogen-containing out gases at the temperatures at which chemical vapor deposition of silicon carbide will take place from appropriate source gases. The substrate is heated to a temperature at which chemical vapor deposition of silicon carbide will take place from appropriate source gases by inductively heating the susceptor using an induction frequency that heats the susceptor material. Silicon-containing and carbon-containing source gases are then introduced that will form an epitaxial layer of silicon carbide upon the heated substrate.
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Carter, Jr. Calvin H.
Coleman Thomas G.
Kong Hua-Shuang
Chaudhuri Olik
Cree Research Inc.
Horton Ken
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