Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Patent
1993-09-22
1994-08-16
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
257 77, 257101, 257102, 257103, H01L 3300
Patent
active
053389441
ABSTRACT:
A light emitting diode is disclosed that emits light in the blue region of the visible spectrum with increased brightness and efficiency. The light emitting diode comprises an n-type silicon carbide substrate; an n-type silicon carbide top layer; and a light emitting p-n junction structure between the n-type substrate and the n-type top layer. The p-n junction structure is formed of respective portions of n-type silicon carbide and p-type silicon carbide. The diode further includes means between the n-type top layer and the n-type substrate for coupling the n-type top layer to the light-emitting p-n junction structure while preventing n-p-n behavior between the n-type top layer, the p-type layer in the junction structure, and the n-type substrate.
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Bulman Gary E.
Dmitriev Vladimir
Edmond John A.
Kong Hua-Shuang
Cree Research Inc.
Mintel William
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