Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1998-04-13
2000-09-19
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117104, 117952, C30B 2514
Patent
active
061206008
ABSTRACT:
A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.
REFERENCES:
patent: 3740622 (1973-06-01), Pankove et al.
patent: 3819974 (1974-06-01), Stevenson et al.
patent: 3849707 (1974-11-01), Braslau et al.
patent: 3864592 (1975-02-01), Pankove
patent: 3984263 (1976-10-01), Asao et al.
patent: 4153905 (1979-05-01), Charmakadze et al.
patent: 4396929 (1983-08-01), Ohki et al.
patent: 4408217 (1983-10-01), Kobayashi et al.
patent: 4473938 (1984-10-01), Kobayashi et al.
patent: 4476620 (1984-10-01), Ohki et al.
patent: 4855249 (1989-08-01), Akasaki et al.
patent: 4862471 (1989-08-01), Pankove
patent: 4903088 (1990-02-01), Van Opdorp
patent: 4911102 (1990-03-01), Manabe et al.
patent: 4985742 (1991-01-01), Pankove
patent: 5122485 (1992-06-01), Manabe et al.
patent: 5218216 (1993-06-01), Manabe et al.
patent: 5239188 (1993-08-01), Takeuchi et al.
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5272108 (1993-12-01), Kozawa
patent: 5273933 (1993-12-01), Hatano et al.
patent: 5278433 (1994-01-01), Manabe et al.
patent: 5281830 (1994-01-01), Kotaki et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5369289 (1994-11-01), Tamaki et al.
patent: 5387804 (1995-02-01), Suzuki et al.
patent: 5389571 (1995-02-01), Takeuchi et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5838707 (1998-11-01), Ramdani et al.
patent: 5843227 (1998-12-01), Kimura et al.
patent: 5880486 (1999-03-01), Nakamura et al.
patent: 5886367 (1999-03-01), Udagawa
patent: 5895225 (1999-04-01), Kidoguchi et al.
"Prepration of Mg-doped GaN Diodes Exhibiting Violet Electroluminescence," H.P. Maruska, Mat. Res. Bull., vol. 7, No. 8, pp. 777-781.
Violet Luminescence of Mg-doped GaN. H. P. Maruska et al., Appl. Phys. Lett., vol. 22, No. 6, Mar. 1973, pp. 303-305.
International Search Report for PCT/US96/5160 filed Apr. 15, 1996, dated Aug. 30, 1996 by A. De Laere.
"Optical Gain of Optically Pumped Al.sub.0.9 N/GaN Double Heterostructure at Room Temperature," S.T. Kim et al., Appl. Phys. Lett., vol. 64, No. 12, Mar. 1994, pp. 1535-1536.
"Electrical and Structural Properties of In.sub.x Ga.sub.1-x N on GaAs," C.R. Abernathy, Appl. Phys. Lett. No. 66, No. 13, Mar. 1995, pp. 1632-1634.
"p-Type Conduction in Mg-doped Ga.sub.0.91 In.sub.0.99 N Grown by Metalorganic Vapor-Phase Epitaxy," S. Yamasaki et al., APL, vol. 66,No. 9, 1995, pp.
"GaN Electroluminescent Diodes," J.I. Pankove et al., RCA Review, vol. 32, Sep. 1971, pp. 382-393.
"Gallium Nitride Films," T. L. Chu, J. Electrochem, vol. 118, No. 7 (1971), pp. 1200-1203.
"GaN Blue Light-Emitting Diodes," J. I. Pankove, Journal of Luminescence, vol. 5 (1972), pp. 84-86.
"Room Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al.sub.0.1 Ga.sub.0.9 N/GaN Double Heterostructure," H. Amano et al., Jpn. J.Appl. Phys. vol. 32 (1993), pp. L-1000-L-1002.
"Conductivity Control of AlGaN Fabrication of AlGaN/GaN Multi-Heterostructure and Their Application to UV/Blue Light Emitting Devices," I. Akasaki et al., Mat. Res. Soc. Symp. Proc., vol. 242, Materials Research Society, 1992, pp. 383-395.
"High Power InGaN/GaN Double-Heterostructure Violet Light Emitting Diodes," S. Nakamura, appl. Phys. Lett., vol. 62, No. 19, May 1993, pp. 2390-2392.
"P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes," S. Nakamura, Jpn., J. Appl. Phys. vol. 32 (1993), pp. L8-L11.
"Candela-Class High-Brightness InGaN/AlGaN Double-Heterostructure Blue-Light-Emitting Diodes," S. Nakamura, Appl. Phys. Lett. vol. 64, No. 13, Mar. 1994, pp. 1687-1689.
Perspective of the UV/Blue Light Emitting Devices Based on GaN and Related Compounds, I. Akasaki et al., Optoelectronics Devices and Technologies, vol. 7, No. 1, Jun. 1992, pp 49-56.
"High-Brightness InGaN/AlGaN Double-Heterostructure Blue-Green-Light-Emitting Diodes," S. Nakamura et al., J. Appl. Phys., vol. 76, No. 12, Dec. 1994, pp. 8189-8191.
"Development of Blue High-Intenity LED," 956C3806 Tokyo Nikkei Science in Japanese, Oct. 1994, pp. 44-55.
"Widegap Column-III Nitride Semiconductors for UV/Blue Light Emitting Devices," I. Akasaki et al., J. Electrochem. Soc., vol. 141, No. 8, Aug. 1994, pp. 2266-2271.
"Room Temperature Ultraviolet/Blue Light Emitting Devices Based on AlGaN/GaN Multi-Layered Structure," I. Akasaki et al., Extended Abstracts of the 1992 International Conf. on Solid State Devices and Materials, Tsukuba, 1992, pp. 327-329.
"Conductivity Control of GaN and Fabrication of UV/Blue GaN Light Emitting Devices," I. Akasaki et al., Physica B, vol. 185, 1993, pp. 428-432.
"UV and Blue Electroluminescence from Al/GaN:Mg/GaN LED Treated with Low-Energy Electron Beam Irradiation (LEENI)," H. Amano, Inst. Phys. Conf. Ser. No. 106, Chapter 10, pp. 725-730.
"High efficiency UV and Blue Emitting Devices Prepared by MOVPE and Low Energy Electron Beam Irradiation Treatment," I. Akasaki et al., SPIE, vol. 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications (1990), pp. 138-149.
"Electrical Properties of n-type Vapor Grown Gallium Nitride," M. Ilegems et al.; J. Phys. Chem. Solids, vol. 34, 1973, pp. 885-895.
"GaN Yellow-Light Emitting Diodes," J. I. Pankove, Journal of Luminescence, vol. 6 (1973), pp. 54-60.
"Violet-Electroluminescence from Mg-doped GaN Point Contact Diodes," Y. Morimoto, Japan J. Appl. Phys., vol. 13 (1974), No. 8, pp. 1307-1308.
"Anomalous I-V Characteristics in Mg-doped GaN Point Contact Diodes," Y. Morimoto, Japan J. Appl. Phys., vol. 14 (1975), No. 4, pp. 577-578.
"Gallium Nitride Diodes Emitting Dark Blue to Violet Light," A. N. Vasilishchev et al., Sov. Phys. Semicond., vol. 9, No. 9 (1975), pp. 1189-1190.
"Low-Voltage GaN LED's," V. M. Andreev, Sov. Tech. Phys. Lett., vol. 3, No. 2, Feb. 1977, pp. 75-76.
"Efficient Injection Mechanism for Electroluminescence in GaN," G. Jacob et al., Applied Physics Letters, vol. 30, No. 18, Apr. 1977, pp. 412-414.
"Improvements on the Electrical and Luminescent Properties of Reactive Molecular Beam Epitaxially Grown GaN Films by Using AIN-Coated Sapphire Substrates," S. Yoshida et al., Appl. Phy. Lett. 42(5), Mar. 1983, pp. 427-429.
"Properties of GaN Tunneling MIS-Light-Emitting diodes," O. Lagerstedt et al., J. Appl. Phys. 39(5), May 1978, pp. 2953-2957.
"P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)," H. Amano et al., JJAP, vol. 28, No. 12, Dec. 1989, pp. 12112-12114.
"Molecular Beam Epitaxy of Nitride Thin Films," M. J. Paisley, Journal of Crystal Growth 127 (1993), pp. 136-142.
Growth of In.sub.x Ga.sub.(1-x) N Compound Semiconductors and High-Power InGaN/AlGaN Double Heterostructure Violet-Light-Emitting Diodes, S. Nakamura, Microelectronics Journal, vol. 25, 1994, pp. 651-659.
"Preparation of A1.sub.x Ga.sub.1-x N/GaN Heterostructure by Movpe, K. et al., Journal of Crystal Growth," vol. 104, 1990, pp. 533-538.
"Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al.sub.0.1 Ga.sub.0.9 N Layered Structures," K. Itoh et al., Japanese Journal of Applied Physics, vol. 30,No. 9A, Sep. 1991, pp. 1924-1927
Edmond John A.
Kong Hua-Shuang
Cree Inc.
Kunemund Robert
Summa, P.A. Philip
LandOfFree
Double heterojunction light emitting diode with gallium nitride does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Double heterojunction light emitting diode with gallium nitride , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double heterojunction light emitting diode with gallium nitride will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1068456