4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Regenerative type switching device
  6. With extended latchup current level

Hidekatsu Onose

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Bipolar device and fabrication method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Emitter region feature
Reexamination Certificate

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Gate turn-off thyristor and power convertor using the same

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Patent

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Insulated gate type semiconductor device in which the reliabilit

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent

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Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate

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Profile ID: LFUS-PAI-P-616548

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