Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2005-07-12
2005-07-12
Thompson, Craig A. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S136000, C257S330000
Reexamination Certificate
active
06917054
ABSTRACT:
A semiconductor device includes a trench formed on a source side of a drift region, a p-type gate region and a gate formed at the bottom of the trench, and the source formed over the entire surface of the unit device through an insulating film. The narrowest portion of a channel of the device is deeper than one-half the junction depth of the p-type gate region. This allows the width of the channel on the drain side to be reduced even when a lower energy ion implantation manufacturing process is used.
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Homma Hideo
Onose Hidekatsu
Watanabe Atsuo
Antonelli Terry Stout & Kraus LLP
Dolan Jennifer M
Hitachi , Ltd.
Thompson Craig A.
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