Semiconductor device

Details Semiconductor device Semiconductor device

2005-05-17

2005-05-17

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S257000, C257S263000, C257S264000, C257S265000, C257S266000, C257S076000, C257S077000, C257S135000, C257S136000, C257S134000, C257S256000, C257S394000, C257S342000

Reexamination Certificate

active

06894346

ABSTRACT:
A structure is provided that ensures a low on-resistance and a better blocking effect. In a lateral type SIT (Static Induction Transistor) in which a first region is used as a p+gate and a gate electrode is formed on the bottom of the first region, the structure is built such that the p+gate and an n+source are contiguous. An insulating film is formed on the surface of an n−channel, and an auxiliary gate electrode is formed on the insulating film. In addition, the auxiliary gate electrode and the source electrode are shorted.

REFERENCES:
patent: 5079607 (1992-01-01), Sakurai
patent: 6281521 (2001-08-01), Singh
S. Harada et al., “Back-Gate 4H-SiC JFET Fabricated on N-Type Substrate”, The Japan Society of Applied Physics, The 61stAutumn Meeting, 2000. (No month cited).

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