Insulated gate type semiconductor device in which the reliabilit

Details Insulated gate type semiconductor device in which the reliabilit Insulated gate type semiconductor device in which the reliabilit

1995-03-10

1997-06-03

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257153, 257170, 257178, 257181, 257341, 257144, H01L 2974

Patent

active

056357346

ABSTRACT:
An insulated gate type semiconductor device has a gate electrode which controls current flow between two regions of the same conductivity type in a semiconductor substrate. A main electrode has a first portion contacting a first one of the two regions, a second portion extending above the gate electrode and a third portion providing a raised external contact surface to contact an external electrode. The gate electrode is insulated above and below by insulating films. To prevent damage to the gate electrode and the lower insulating films due to the pressure of the external electrode, there is a supporting insulating layer on the surface of the substrate underlying the contact portion of the main electrode and having a thickness substantially greater than the thickness of the insulating film below the gate electrode and the contact surface is more remote from the substrate than the second portion of said main electrode.

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