Bipolar device and fabrication method thereof

Details Bipolar device and fabrication method thereof Bipolar device and fabrication method thereof

2011-03-15

2011-03-15

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Emitter region feature

C257S152000, C257S156000, C257S198000, C257S583000, C257SE29191

Reexamination Certificate

active

07906796

ABSTRACT:
In a bipolar device, such as transistor or a thyristor, the emitter layer or the anode layer is formed of two high-doped and low-doped layers, a semiconductor region for suppressing recombination comprising an identical semiconductor having an impurity density identical with that of the low-doped layer is present being in contact with a base layer or a gate layer and a surface passivation layer, and the width of the semiconductor region for suppressing recombination is defined equal with or longer than the diffusion length of the carrier. This provides, among other things, an effect of attaining reduction in the size of the bipolar transistor or improvement of the switching frequency of the thyristor without deteriorating the performance.

REFERENCES:
patent: 5539217 (1996-07-01), Edmond et al.
patent: 2010/0001290 (2010-01-01), Nonaka
patent: 2006-351621 (2006-12-01), None
Ivanov et al., “Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs”, Solid-State Electronics, vol. 46 (2002), pp. 567-572.

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