Buried strap formation in a DRAM trench capacitor

Details Buried strap formation in a DRAM trench capacitor Buried strap formation in a DRAM trench capacitor

1997-06-20

1998-12-01

Trinh, Michael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

438248, 438249, 438391, 438392, 438243, 438386, H01L 218242

Patent

active

058442669

ABSTRACT:
In a method for making an electrical connection between a trench storage capacitor and an access transistor in a DRAM cell, the electrical connection is formed through the selectively controlled outdiffusion of either N-type or P-type dopants present in the trench through a single crystalline semiconducting material which is grown by epitaxy (epi) from the trench sidewall. This epitaxially grown single crystalline layer acts as a barrier to excessive dopant outdiffusion which can occur in the processing of conventional DRAMs.

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patent: 5593912 (1997-01-01), Rejeevakumar
patent: 5614431 (1997-03-01), DeBrosse
patent: 5719080 (1998-02-01), Kenny

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