Collarless trench DRAM device

Details Collarless trench DRAM device Collarless trench DRAM device

2006-07-18

2006-07-18

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S305000

Reexamination Certificate

active

07078756

ABSTRACT:
The present invention provides collarless trench semiconductor memory devices having minimized vertical parasitic FET leakage and methods of forming the same.

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Pending IBM Application Entitled “Vertical SOI Device”, U.S. Appl. No. 10/710,166, filed Jun. 23, 2004.
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