Buried-strap formation in a dram trench capacitor

Details Buried-strap formation in a dram trench capacitor Buried-strap formation in a dram trench capacitor

1996-02-22

1998-10-27

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438248, 438249, 438386, 438391, 438392, H01L 2120, H01L 218242

Patent

active

058277650

ABSTRACT:
A method for making an electrical connection between a trench storage capacitor and an access transistor in a DRAM cell. The electrical connection is formed through the selectively controlled outdiffusion of either N-type or P-type dopants present in the trench through a single crystalline semiconducting material which is grown by epitaxy (epi) from the trench sidewall. This epitaxially grown single crystalline layer acts as a barrier to excessive dopant outdiffusion which can occur in the processing of conventional DRAMs.

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patent: 5719080 (1998-02-01), Kenny

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