Fu-Tai Liou

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Aluminum contact structure for integrated circuits

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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Contacts for semiconductor devices

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent

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Gradient barrier layer for copper back-end-of-line technology

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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Insulated gate field-effect transistor with gate-drain overlap a

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Integrated circuit metallization with zero contact enclosure req

Fishing – trapping – and vermin destroying
Patent

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Profile ID: LFUS-PAI-P-112842

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