Gradient barrier layer for copper back-end-of-line technology

Details Gradient barrier layer for copper back-end-of-line technology Gradient barrier layer for copper back-end-of-line technology

2006-06-27

2006-06-27

Nguyen, Ha Tran (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S761000, C257S762000, C257S763000, C257S764000

Reexamination Certificate

active

07067917

ABSTRACT:
The present invention is directed to a structure of a gradient barrier layer. The gradient barrier with a composite structure of metal/metal salt of different composition/metal such as Ta/TaxN1−x/TaN/TaxN1−x/Ta (tantalum/tantalumxnitride1−x/tantalum nitride/tantalumxnitride1−x/tantalum) is proposed to replace the conventional barrier for copper metallization. The gradient barrier can be formed in a chemical vapor deposition (CVD) process or a multi-target physical vapor deposition (PVD) process. For CVD process, using the characteristics of well-controlled reaction gas injection, the ratio of tantalum (Ta) and nitrogen (N) can be modulated gradually to form the gradient barrier. For the multi-target PVD process, the gradient barrier is formed by depositing multi-layers of different composition TaxN1−xfilms. After subsequent thermal cycle processes such as metal alloy, the inter-layer diffusion occurs and a more smooth distribution of Ta and N is achieved for the gradient barrier. The advantages of forming the gradient barrier include a well-controlled process, a strong adhesion between via and landing metal, more uniform step coverage, and less brittle to reduce crack.

REFERENCES:
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 6194310 (2001-02-01), Hsu et al.
patent: 6346745 (2002-02-01), Nogami et al.

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