4. Static information storage and retrieval
  5. Floating gate
  6. Particular biasing

Ching-Sung Yang

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Bi-directional Fowler-Nordheim tunneling flash memory

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Channel write/erase flash memory cell and its manufacturing...

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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Channel write/erase flash memory cell and its manufacturing...

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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Contactless channel write/erase flash memory cell and its...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Contactless channel write/erase flash memory cell and its...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2454225

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