Contactless channel write/erase flash memory cell and its...

Details Contactless channel write/erase flash memory cell and its... Contactless channel write/erase flash memory cell and its...

2005-06-21

2005-06-21

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S314000

Reexamination Certificate

active

06908818

ABSTRACT:
A contactless channel write/erase flash memory cell structure and its fabricating method for increasing the level of integration is disclosed. The present invention utilizes a buried diffusion method to form an N+-doped region that acts as a drain of the flash memory cell and a P-doped region underneath an oxide layer. The N+-doped region and the P-doped region extend to in a bit line direction and a metal contact is used to connect the two away from any of the N+-doped region and the P-doped region of the flash memory cell for decreasing the numbers of the metal contacts in the flash memory cell and reducing dimensions of the device.

REFERENCES:
patent: 5424567 (1995-06-01), Chen
patent: 5936887 (1999-08-01), Choi et al.

Affiliated with

Also associated with

Rating

Contactless channel write/erase flash memory cell and its... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contactless channel write/erase flash memory cell and its..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contactless channel write/erase flash memory cell and its... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3517421