Bi-directional Fowler-Nordheim tunneling flash memory

Details Bi-directional Fowler-Nordheim tunneling flash memory Bi-directional Fowler-Nordheim tunneling flash memory

2005-01-25

2005-01-25

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S318000, C257S390000

Reexamination Certificate

active

06847087

ABSTRACT:
A low-voltage nonvolatile memory array includes a cell well of a first conductivity type formed in a substrate; columns of buried bit lines of a second conductivity type formed within the cell well, wherein columns of the buried bit lines are isolated from each other and each is further divided into of sub-bit line segments with deeply doped source wells of the first conductivity type connected to the cell well; a plurality of memory cell blocks serially arranged over one of the columns of buried bit lines, wherein a memory cell block corresponds to a sub-bit line segment, and each memory cell block includes at least one memory transistor having a stacked gate, source, and drain; and a local bit line overlying the memory cell blocks and electrically connected to the drain of the memory transistor via a contact plug short-circuiting the drain and the subjacent buried bit line.

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