Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-04
2006-07-04
Nguyen, Cuong (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
07071066
ABSTRACT:
A method for forming an improved gate stack structure having improved electrical properties in a gate structure forming process A method for forming a high dielectric constant gate structure including providing a silicon substrate comprising exposed surface portions; forming an interfacial layer over the exposed surface portions having a thickness of less than about 10 Angstroms; forming a high dielectric constant metal oxide layer over the interfacial layer having a dielectric constant of greater than about 10; forming a barrier layer over the high dielectric constant metal oxide layer; forming an electrode layer over the barrier layer; and, etching according to an etching pattern through a thickness of the electrode layer, barrier layer, high dielectric constant material layer, and the interfacial layer to form a high dielectric constant gate structure.
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Chen Chi-Chun
Chen Chia-Lin
Chen Shih-Chang
Hou Tuo-Hung
Lin Yeou-Ming
Nguyen Cuong
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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