High temperature hydrogen annealing of a gate insulator...

Details High temperature hydrogen annealing of a gate insulator... High temperature hydrogen annealing of a gate insulator...

2007-01-23

2007-01-23

Deo, Duy-Vu (Department: 1765)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S587000, C438S591000, C438S791000

Reexamination Certificate

active

10758317

ABSTRACT:
A method of defining a conductive gate structure for a MOSFET device wherein the etch rate selectivity of the conductive gate material to an underlying insulator layer is optimized, has been developed. After formation of a nitrided silicon dioxide layer, to be used as for the MOSFET gate insulator layer, a high temperature hydrogen anneal procedure is performed. The high temperature anneal procedure replaces nitrogen components in a top portion of the nitrided silicon dioxide gate insulator layer with hydrogen components. The etch rate of the hydrogen annealed layer in specific dry etch ambients is now decreased when compared to the non-hydrogen annealed nitrided silicon dioxide counterpart. Thus the etch rate selectivity of conductive gate material to underlying gate insulator material is increased when employing the slower etching hydrogen annealed nitrided silicon dioxide layer.

REFERENCES:
patent: 6245616 (2001-06-01), Buchanan et al.
patent: 6335278 (2002-01-01), Miyazaki
patent: 6387761 (2002-05-01), Shih et al.
patent: 6559007 (2003-05-01), Weimer
patent: 6569741 (2003-05-01), Houston et al.
patent: 6649538 (2003-11-01), Cheng et al.
patent: 6821868 (2004-11-01), Cheng et al.
patent: 2002/0197880 (2002-12-01), Niimi et al.
patent: 2003/0232491 (2003-12-01), Yamaguchi

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