Method for determining time dependent dielectric breakdown

Details Method for determining time dependent dielectric breakdown Method for determining time dependent dielectric breakdown

2007-06-14

2009-08-25

Nguyen, Ha Tran T (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S762010

Reexamination Certificate

active

07579859

ABSTRACT:
The current invention provides a method of determining the lifetime of a semiconductor device due to time dependent dielectric breakdown (TDDB). This method includes providing a plurality of samples of dielectric layer disposed as a gate dielectric layer of a MOS transistor, approximating a source/drain current density distribution as a first function of voltage applied on the samples, approximating a substrate current density distribution as a second function of voltage applied on the samples, approximating a dielectric layer lifetime distribution as a third function of source/drain current density and substrate current density in the samples, deriving, from the first, the second, and the third functions, an empirical model wherein a dielectric layer lifetime is a function of voltage applied thereon, and using the model to determine dielectric layer lifetime at a pre-determined operating gate voltage.

REFERENCES:
patent: 5594349 (1997-01-01), Kimura
patent: 6541285 (2003-04-01), Koike
Zhi Cui et al., Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices, Aug. 26, 2004, Solid State Electronics 49 (2005) 505-511.
Naoyoshi Tamura and Masataka Kase, A Proper Lifetime-Prediction Method of PMOSFET With 1.1NM Gate Dielectrics in the Lower Testing Voltage Region, 2003, IEEE 03CH37400. 41st Annual International Reliablity Physics Symposium, Dallas, Texas, 2003, 578-579.
Liao et al., “A new ‘multi-step’ power-law TDDB lifetime model and boron penetration effect on TDDB of ultra thin oxide”, Apr. 15, 2007, IEEE 07CH37867 45th Annual International Reliability Physics Symposium, Phoenix, pp. 574-575.

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