Atsuko Uemoto

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Electrode structure for silicon carbide semiconductors

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Heteroepitaxial growth of SiC on Si

Metal treatment – Barrier layer stock material – p-n type
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Schottky barrier gate type field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
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Semiconductor device

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Profile ID: LFUS-PAI-P-39801

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