Electrode structure for silicon carbide semiconductors

Details Electrode structure for silicon carbide semiconductors Electrode structure for silicon carbide semiconductors

1989-09-05

1991-02-05

Hille, Rolf

357 80, H01L 2354, H01L 2348

Patent

active

049909940

ABSTRACT:
An electrode structure for a silicon carbide single-crystal semiconductor in which the surface of the silicon carbide single-crystal is laminated with a metal layer of titanium, aluminum, chromium or molybdenum, or with the metal layer and an electrically conductive protective layer formed over the metal layer to provide an ohmic electrode.

REFERENCES:
patent: 4352120 (1982-09-01), Kurihara et al.
patent: 4561010 (1985-12-01), Ogihara et al.
patent: 4571610 (1986-02-01), Matsushita et al.
Sequeda, The Role of Thin Film Materials on the Technology of Integrated Circuit Fabrication-Journal of Metals-Nov. 1985.
Hilborn et al., Proceedings of the 3rd Annual Conf. on Si'C, 1968, pp. 337-339.
Nishino et al., Appl. Phys. Lett., 42(5), 1983, pp. 460-462.
Liaw et al., J. Electrochem. Soc. Solid State Science & Tech., 1985, pp. 642-648.

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